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  1. Physical Review Link Manager

  2. 22 nov 2017 · Band gap engineering, i.e. “tayloring” of the SL band gaps by varying the layer thicknesses (m and n), is crucial for the design of optoelectronic devices.

  3. 30 set 2021 · The larger the vacancy amount, the smaller the band gap, and the lower the activation energy, thus giving a higher specific activity. Band-gap engineering, widely used for photocatalytic processes, can be a new tool for tailoring the activity of semiconducting oxide catalysts for thermocatalytic reactions.

  4. 30 mar 2015 · Band gap engineering has emerged as a powerful tool in the search for new materials that satisfy the criteria (i) and (ii) mentioned above. Of particular interest, PEC applications are materials harvesting the maximum possible sunlight energy. 10,11 This makes wide band gap materials (such as GaN exhibiting a band gap of 3.45 eV (Ref. 12)) very poor sunlight harvesters as they can absorb only ...

  5. 9 nov 2017 · We, for the first time, provide the experimental demonstration on the band gap engineering of layered hexagonal SnSe2 nanostructured thin films by varying the thickness. For 50 nm thick film, the ...

  6. Energy-levels well-matched Mg1−xCuxWO4 (0.1 < x < 0.5)/Bi2WO6 heterojunctions with Type II staggered conduction bands and valence bands have been successfully constructed by band gap engineering based on solid-solution design and synthesized by a facile one-step hydrothermal method. X-ray diffraction (XRD), X-ray p

  7. 16 apr 2014 · We propose a strategy to engineer the band gaps of perovskite oxide ferroelectrics, supported by first principles calculations. We find that the band gaps of perovskites can be substantially reduced by as much as 1.2 eV through local rhombohedral-to-tetragonal structural transition.