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24 ago 2020 · Bandgap engineering of two-dimensional semiconductor materials | npj 2D Materials and Applications. Review Article. Open access. Published: 24 August 2020. Bandgap engineering of...
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1 feb 1987 · Band-gap engineering is a powerful technique for the design of new semiconductor materials and devices. Heterojunctions and modern growth techniques, such as molecular beam epitaxy, allow...
- Federico Capasso
In particular, these 2D materials were demonstrated to exhibit highly tunable bandgaps, achieved via the control of layers number, heterostructuring, strain engineering, chemical doping, alloying, intercalation, substrate engineering, as well as an external electric field.
24 ago 2020 · We provide a review of the basic physical principles of these various techniques on the engineering of quasi-particle and optical bandgaps, their bandgap tunability, potentials and limitations in practical realization in future 2D device technologies.
1 dic 2020 · Article PDF Available. Bandgap engineering of two-dimensional semiconductor materials. December 2020. npj 2D Materials and Applications 4 (1) DOI: 10.1038/s41699-020-00162-4. License. CC BY....
31 ott 2017 · Bandgap engineering in semiconductor alloy nanomaterials with widely tunable compositions. Cun-Zheng Ning, Letian Dou & Peidong Yang. Nature Reviews Materials 2, Article number: 17070 ( 2017 )...
Band-gap engineering is a powerful technique for the design of new semiconductor materials and devices. Heterojunctions and modern growth techniques, such as molecular beam epitaxy, allow band diagrams with nearly arbitrary and continuous band-gap variations to be made.
