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Simon Min Sze (Nanchino, 21 marzo 1936 – 6 novembre 2023) è stato un ingegnere elettrico taiwanese
Simon Min Sze, or Shi Min ( Chinese: 施敏; pinyin: Shī Mǐn; 21 March 1936 – 6 November 2023), was a Taiwanese-American electrical engineer. He is best known for inventing the floating-gate MOSFET with Korean electrical engineer Dawon Kahng in 1967.
7 nov 2023 · Dr. Simon Sze, a visionary in the field of semiconductor physics and technology, and a renowned educator, passed away peacefully on November 6, 2023, at the age of 87. His remarkable life...
- January 1, 1
Remembering Dr. Simon Sze: A Seminal Figure in Semiconductor Technology, Mentor, and Visionary [Obituary] Abstract: Recounts the career and contributions of Simon Sze. Published in: IEEE Electron Devices Magazine ( Volume: 1 , Issue: 3 , December 2023 )
10 nov 2023 · A mentor in our semiconductor industry passed away on November 6th, 2023, and left tremendously valuable assets for us who can carry his legacy forward, including his research results and the best professional book, to continue making discoveries in the semiconductor technology realm.
Dr. Simon M. Sze was born in Nanking, China in 1936. He received the B. S. degree from the National Taiwan University in 1957, M. S. from the University of Washington in 1960, and Ph. D. from Stanford University in 1963, all in Electrical Engineering.
Simon SZE For his contributions to understanding carrier transports at the interface between metal and semiconductor, enabling Ohmic and Schottky-contact formations for scaling integrated circuits at the “Moore’s law” rate during the past five decades.
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