Risultati di ricerca
The dead layer is also formed by chemical intermixing between the electrode and the ferroelectric film. Considering the HZO ferroelectric film, if its thickness is decreased below 5 nm, orthorhombic formation is suppressed, so the device's performance is decreased sharply.
15 giu 2016 · Abstract. Interfacial dead layer effect has been widely noticed in the past and was thought to be responsible for the critical thickness of ferroelectric thin film. Despite extensive studies, the origin is still under fierce debate. The dead layer even exists at the perfect interface without defects and impurities.
- Qiong Yang, Juexian Cao, Yichun Zhou, Lizhong Sun, Xiaojie Lou
- 2016
23 dic 2020 · Share. Tools. In this study, we investigate the effects of various electrodes on the ferroelectric properties of ultrathin HfZrO x (HZO) films. The ferroelectric polarization is totally suppressed in the HZO films with TiN and W bottom electrodes when the film thickness is below 5 nm.
15 mag 2017 · Intrinsic dead layer effects in relaxed epitaxial BaTiO3 thin film grown by pulsed laser deposition - ScienceDirect. Materials & Design. Volume 122, 15 May 2017, Pages 157-163. Intrinsic dead layer effects in relaxed epitaxial BaTiO3 thin film grown by pulsed laser deposition. Author links open overlay panel. Y. Gagou a. , J. Belhadi a. ,
- Y. Gagou, J. Belhadi, B. Asbani, M. El Marssi, J.-L. Dellis, Yu. I. Yuzyuk, I.P. Raevski, J.F. Scott
- 2017
20 mag 2022 · A dead layer without superconductivity, i.e., zero resistance and Meissner effect, commonly exists at the interface between substrate and superconducting film. It is demonstrated that the...
24 lug 2023 · An artificial dead-layer to protect the ferroelectric thin films from electron injection. Xiaoyang Chen ; Jie Zhang; Binbin Huang; Yun Liu; Ping Yu. Author & Article Information. J. Appl. Phys. 134, 044103 (2023) https://doi.org/10.1063/5.0158105. Article history. Views. Share. Tools.
22 lug 2002 · Pulsed laser deposition was used to make a series of Au/Ba 0.5 Sr 0.5 TiO 3 (BST)/ SrRuO 3 / MgO thin film capacitors with dielectric thickness ranging from ∼15 nm to ∼1 μm. Surface grain size of the dielectric was monitored as a function of thickness using both atomic force microscopy and transmission electron microscopy.
