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  1. Il band-gap engineering è l'insieme delle tecniche e dei processi che permettono di controllare e ingegnerizzare in maniera precisa le giunzioni (zone interfacciali che si presentano quando si pongono a contatto materiali con un diverso reticolo cristallino) e le bande proibite di materiali, tipicamente semiconduttori.

  2. Band-gap engineering is the process of controlling or altering the band gap of a material. This is typically done to semiconductors by controlling the composition of alloys, constructing layered materials with alternating compositions, or by inducing strain either epitaxially or topologically.

  3. 24 ago 2020 · We provide a review of the basic physical principles of these various techniques on the engineering of quasi-particle and optical bandgaps, their bandgap tunability, potentials and limitations...

    • A. Chaves, J. G. Azadani, Hussain Alsalman, Hussain Alsalman, D. R. da Costa, R. Frisenda, A. J. Cha...
    • 2020
  4. en.wikipedia.org › wiki › Band_gapBand gap - Wikipedia

    Band-gap engineering is the process of controlling or altering the band gap of a material by controlling the composition of certain semiconductor alloys, such as GaAlAs, InGaAs, and InAlAs. It is also possible to construct layered materials with alternating compositions by techniques like molecular-beam epitaxy .

  5. 31 ott 2017 · In this Review, we focused on the important emerging theme of bandgap engineering through alloying with control over a wide range of compositions that is enabled by nanoscale materials and ...

    • Cun-Zheng Ning, Cun-Zheng Ning, Letian Dou, Letian Dou, Letian Dou, Peidong Yang, Peidong Yang
    • 2017
  6. 9 nov 2017 · Band Gap Engineering of Hexagonal SnSe 2 Nanostructured Thin Films for Infra-Red Photodetection. Emma P. Mukhokosi, Saluru B. Krupanidhi & Karuna K. Nanda. Scientific Reports 7, Article...

  7. Band-gap engineering is a powerful technique for the design of new semiconductor materials and devices. Heterojunctions and modern growth techniques, such as molecular beam epitaxy, allow band diagrams with nearly arbitrary and continuous band-gap variations to be made.