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  1. 24 ago 2020 · Bandgap engineering of two-dimensional semiconductor materials | npj 2D Materials and Applications. Review Article. Open access. Published: 24 August 2020. Bandgap engineering of...

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  2. 31 ott 2017 · In a semiconductor, the bandgap is arguably the most critical parameter for almost all applications involving photon absorption or emission, such as solar cells, solid-state lighting,...

    • Cun-Zheng Ning, Cun-Zheng Ning, Letian Dou, Letian Dou, Letian Dou, Peidong Yang, Peidong Yang
    • 2017
  3. Band-gap engineering is a powerful technique for the design of new semiconductor materials and devices. Heterojunctions and modern growth techniques, such as molecular beam epitaxy, allow band diagrams with nearly arbitrary and continuous band-gap variations to be made.

    • Federico Capasso
    • 1987
  4. 1 mag 2023 · As discussed above, bandgap engineering can contribute to tunable bandgap structures and tailored optical and electric properties, making 2D semiconductors promising candidates as channel materials for next-generation optoelectronic applications.

  5. Beyond graphene, recently discovered two-dimensional (2D) materials possess semiconducting bandgaps ranging from the terahertz and mid-infrared in bilayer graphene and black phosphorus, visible in transition metal dichalcogenides, to the ultraviolet in hexagonal boron nitride.

  6. 28 dic 2021 · Ultrawide-bandgap semiconductors: An overview. Overview. Focus Issue: Ultra-wide Bandgap Materials, Devices, and Systems. Published: 28 December 2021. Volume 36 , pages 4601–4615, ( 2021 ) Cite this article. Download PDF. Man Hoi Wong, Oliver Bierwagen, Robert J. Kaplar & Hitoshi Umezawa. 10k Accesses. 30 Citations. Explore all metrics. Abstract.

  7. 1 set 2022 · Band gap formation process in graphene. •. Energy band gap in different processes. •. Resolving future opportunities and challenges using advanced technological concept. Abstract. Graphene, a single particle thicker carbon layer with a hexagonal form, was successfully confined, and the potential electrical impact was observed in 2004.